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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX10 DESCRIPTION *Low Collector Saturation Voltage*High Switching Speed *High Current Current Capability APPLICATIONS *Motor control *Linear and switching industrial equipment Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 160 160 125 7 25 30 5 150 200 -65~200 UNIT V V V V A A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 0.2A; IB= 0 IE= 50mA; IC= 0 IC= 10A; IB= 1A IC= 20A ;IB= 2A IC= 20A ;IB= 2A VCE= 100V; IB= 0 VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=125 VEB= 5V; IC= 0 IC= 10A ; VCE= 2V IC= 20A ; VCE= 4V IC= 1A; VCE= 15V, ftest= 10MHz 20 10 8 MIN 125 7 TYP. BUX10 MAX UNIT V V 0.6 1.2 2.0 1.5 1.5 6.0 1.0 60 V V V mA mA mA MHz Switching Times ton ts tf Turn-on Time Storage Time IC= 20A ;IB1= -IB2= 2A; VCC= 30V Fall Time 0.3 s IC= 20A ;IB1= 2A; VCC= 30V 1.5 1.2 s s isc Websitewww.iscsemi.cn |
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